High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor
نویسندگان
چکیده
منابع مشابه
Ion-sensitive field effect transistor as a pH sensor.
In this work, both the static and dynamic behaviors as well as the signal read-out circuits of ISFETs were studied. The standard NMOS structure in conjunction with the insulator-electrolyte capacitor was used to model the ISFET under study. The site-binding theory was incorporated to describe the chemistry occurring at the insulator/electrolyte interface. The mechanism of the threshold voltage ...
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ژورنال
عنوان ژورنال: Sensors
سال: 2018
ISSN: 1424-8220
DOI: 10.3390/s18051314